takeMS International AG TMS2GB264D082-805G 2GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

takeMS International AG TMS2GB264D082-805G 2GB vs Gold Key Technology Co Ltd NMUD480E86-3200 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 19.5

测试中的平均数值

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E86-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 46

左右 -70% 更低的延时
更快的写入速度，GB/s

15.0 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 27
读取速度，GB/s

5,535.6 19.5
写入速度，GB/s

1,852.4 15.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 3631

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

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SK Hynix HMA451S6AFR8N-TF 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 9905700-026.A00G 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Crucial Technology CT8G4DFS8213.M8FH 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3333C16-8GTZB 8GB

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Samsung M393B5170FH0-CK0 4GB

Corsair CM4X8GE2400C15K4 8GB

Corsair CM4X8GE2400C15K4 8GB