takeMS International AG TMS2GB264D082-805G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

takeMS International AG TMS2GB264D082-805G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 11.1

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 46

左右 -35% 更低的延时
更快的写入速度，GB/s

9.5 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 34
读取速度，GB/s

5,535.6 11.1
写入速度，GB/s

1,852.4 9.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Avant Technology J641GU49J2320NE 8GB

Avant Technology J641GU49J2320NE 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CM4X4GF2400C14K4 4GB

Corsair CM4X4GF2400C14K4 4GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Kingston ACR24D4S7D8MB-16 16GB

Kingston ACR24D4S7D8MB-16 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology BLS16G4D26BFSE.16FD 16GB

Crucial Technology BLS16G4D26BFSE.16FD 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-4000C18-8GTZKW 8GB

G Skill Intl F4-4000C18-8GTZKW 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMR32GX4M4C3333C16 8GB

Corsair CMR32GX4M4C3333C16 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

SK Hynix HMA81GU7AFR8N-UH 8GB

SK Hynix HMA81GU7AFR8N-UH 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3333C16-8GVR 8GB

G Skill Intl F4-3333C16-8GVR 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston 9905624-010.A00G 4GB

Kingston 9905624-010.A00G 4GB