takeMS International AG TMS2GB264D082-805G 2GB vs Kingston ACR32D4U2S8ME-16 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Kingston ACR32D4U2S8ME-16 16GB

Kingston ACR32D4U2S8ME-16 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 17.2

测试中的平均数值

Kingston ACR32D4U2S8ME-16 16GB

需要考虑的原因
Kingston ACR32D4U2S8ME-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 46

左右 -35% 更低的延时
更快的写入速度，GB/s

12.1 1,852.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Kingston ACR32D4U2S8ME-16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 34
读取速度，GB/s

5,535.6 17.2
写入速度，GB/s

1,852.4 12.1
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

858 3119

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A2K43DB1-CWE 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Corsair CMW16GX4M1Z3600C18 16GB

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A-DATA Technology DDR3 1600 4GB

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Corsair CMK32GX4M4Z2933C16 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB