takeMS International AG TMS2GB264D082-805G 2GB vs Micron Technology 9ASF1G72PZ-2G6D1 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Micron Technology 9ASF1G72PZ-2G6D1 8GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 11

测试中的平均数值

Micron Technology 9ASF1G72PZ-2G6D1 8GB

需要考虑的原因
Micron Technology 9ASF1G72PZ-2G6D1 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更快的写入速度，GB/s

8.4 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

5,535.6 11.0
写入速度，GB/s

1,852.4 8.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 2271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 16KTF1G64AZ-1G9P1 8GB

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Apacer Technology 78.D2GF2.4010B 16GB

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Samsung M378B5673EH1-CF8 2GB

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Team Group Inc. TEAMGROUP-SD4-2666 16GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Crucial Technology CT16G4DFRA266.C16FP 16GB

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Cortus SAS 8ATF1G64AZ-2G6E1 8GB

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Elpida EBJ41UF8BDW0-GN-F 4GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Kingston 9905700-025.A00G 8GB

Kingston 9905700-025.A00G 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-2133C15-8GSQ 8GB

G Skill Intl F4-2133C15-8GSQ 8GB

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Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

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