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takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMW32GX4M2A2666C16 16GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Corsair CMW32GX4M2A2666C16 16GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Corsair CMW32GX4M2A2666C16 16GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
16.7
测试中的平均数值
需要考虑的原因
Corsair CMW32GX4M2A2666C16 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
50
左右 -67% 更低的延时
更快的写入速度,GB/s
13.2
1,457.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMW32GX4M2A2666C16 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
30
读取速度,GB/s
3,757.3
16.7
写入速度,GB/s
1,457.4
13.2
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
557
3398
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW32GX4M2A2666C16 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9965600-012.A02G 16GB
PNY Electronics PNY 2GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Kingston 9905403-090.A01LF 4GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Kingston KF548C38-16 16GB
Samsung M393B1K70CH0-CH9 8GB
Panram International Corporation PUD42400C154G4NJK 4GB
Kingston 99U5474-038.A00LF 4GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMW32GX4M4D3600C16 8GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA81GU6JJR8N-VK 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Golden Empire CL14-16-16 D4-3000 4GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C15-16GTZR 16GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3466C16-4GVK 4GB
A-DATA Technology ADOVE1A0834E 1GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Crucial Technology RM51264BA1339.16FR 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
报告一个错误
×
Bug description
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