takeMS International AG TMS2GB264D083805EV 2GB vs Crucial Technology BLS8G4D240FSA.16FBD 8GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 17.6

测试中的平均数值

Crucial Technology BLS8G4D240FSA.16FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 50

左右 -61% 更低的延时
更快的写入速度，GB/s

12.7 1,457.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 31
读取速度，GB/s

3,757.3 17.6
写入速度，GB/s

1,457.4 12.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

557 3084

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Avexir Technologies Corporation T 4GB

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Kingston ACR32D4S2S8ME-16 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Apacer Technology 78.C1GS7.AUW0B 8GB

Apacer Technology 78.C1GS7.AUW0B 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Samsung M471A4G43BB1-CWE 32GB