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takeMS International AG TMS2GB264D083805EV 2GB
Heoriady M471A1K43CB1-CTD 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Heoriady M471A1K43CB1-CTD 8GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 51
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 10.5
    测试中的平均数值
Heoriady M471A1K43CB1-CTD 8GB 需要考虑的原因
Heoriady M471A1K43CB1-CTD 8GB
报告一个错误
  • 更快的写入速度，GB/s
    5.5 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Heoriady M471A1K43CB1-CTD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 51
  • 读取速度，GB/s
    3,757.3 left arrow 10.5
  • 写入速度，GB/s
    1,457.4 left arrow 5.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    557 left arrow 1941

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Heoriady M471A1K43CB1-CTD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHYXPX-HYJ 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Heoriady M471A1K43CB1-CTD 8GB
Heoriady M471A1K43CB1-CTD 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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PNY Electronics PNY 2GB
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内存RAM
Samsung M378B5273DH0-CH9 4GB
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内存RAM
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内存RAM
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Shenzhen Technology Co Ltd 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
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Panram International Corporation W4U2666PS-8GC19 8GB
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Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
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Kingston 9905622-055.A00G 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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Micron Technology 16ATF2G64AZ-2G6E1 16GB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
G Skill Intl F4-3600C18-32GVK 32GB
G Skill Intl F4-3600C18-32GVK 32GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
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Corsair CMWX16GC3600C18W2D 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
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Crucial Technology BLS4G4D240FSA.8FBD 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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INTENSO 5641160 8GB
内存RAM