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takeMS International AG TMS2GB264D083805EV 2GB
Kingston 99U5700-028.A00G 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Kingston 99U5700-028.A00G 8GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Kingston 99U5700-028.A00G 8GB

Kingston 99U5700-028.A00G 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.7
    测试中的平均数值
Kingston 99U5700-028.A00G 8GB 需要考虑的原因
Kingston 99U5700-028.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 50
    左右 -52% 更低的延时
  • 更快的写入速度，GB/s
    11.7 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 99U5700-028.A00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 33
  • 读取速度，GB/s
    3,757.3 left arrow 14.7
  • 写入速度，GB/s
    1,457.4 left arrow 11.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    557 left arrow 2732

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 99U5700-028.A00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SK Hynix HMT41GU7MFR8A-H9 8GB
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Crucial Technology CT8G4DFD824A.C16FDD2 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-4000C19-8GTZSW 8GB
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Ramaxel Technology RMT3010EC58E8F1333 2GB
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Crucial Technology BL16G36C16U4B.M16FE1 16GB
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Samsung M471B5173QH0-YK0 4GB
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Micron Technology 8ATF1G64HZ-2G3B1 8GB
内存RAM
G Skill Intl F4-2666C19-8GIS 8GB
G Skill Intl F4-2666C19-8GIS 8GB
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SK Hynix GKE800UD102408-2400 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
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Kingston 9905734-063.A00G 32GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
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SK Hynix HMAA2GS6CJR8N-XN 16GB
内存RAM
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Samsung M4 70T5663QZ3-CE6 2GB
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Corsair CMD16GX4M2B3733C17 8GB
内存RAM
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Nanya Technology M2X4G64CB8HG9N-DG 4GB
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