RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
Ramaxel Technology RMSA3260KC78HAF-2666 8GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Ramaxel Technology RMSA3260KC78HAF-2666 8GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Ramaxel Technology RMSA3260KC78HAF-2666 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
13.4
测试中的平均数值
需要考虑的原因
Ramaxel Technology RMSA3260KC78HAF-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
46
50
左右 -9% 更低的延时
更快的写入速度,GB/s
7.2
1,457.4
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Ramaxel Technology RMSA3260KC78HAF-2666 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
46
读取速度,GB/s
3,757.3
13.4
写入速度,GB/s
1,457.4
7.2
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
557
1854
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Ramaxel Technology RMSA3260KC78HAF-2666 8GB RAM的比较
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-023.A00LF 4GB
Kingston 9965669-009.A00G 8GB
A-DATA Technology ADOVE1A0834E 1GB
SpecTek Incorporated 16G2666CL19 16GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMR64GX4M4C3200C16 16GB
Samsung M393B1K70CH0-CH9 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905700-053.A00G 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMK32GX4M4A2133C13 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
Kingston HP669238-071-HYC 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M378A1G43EB1-CRC 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Mushkin 991679ES 996679ES 2GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
Kingston KVR16N11/8-SP 8GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
报告一个错误
×
Bug description
Source link