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takeMS International AG TMS4GB364E081139EM 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
比较
takeMS International AG TMS4GB364E081139EM 4GB vs Wilk Elektronik S.A. GR1333D364L9/4G 4GB
总分
takeMS International AG TMS4GB364E081139EM 4GB
总分
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS4GB364E081139EM 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
44
左右 36% 更低的延时
更快的读取速度,GB/s
11.5
10.9
测试中的平均数值
更快的写入速度,GB/s
10.4
7.5
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
报告一个错误
规格
完整的技术规格清单
takeMS International AG TMS4GB364E081139EM 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
28
44
读取速度,GB/s
11.5
10.9
写入速度,GB/s
10.4
7.5
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
2504
1853
takeMS International AG TMS4GB364E081139EM 4GB RAM的比较
Ramos Technology RMB4GB58BCA3-13HC 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM的比较
Ramaxel Technology RMR1870EC58E9F1333 4GB
Kingston ACR26D4U9S1KA-4 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M471A1K43BB1-CRC 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Samsung M393A2K43BB1-CRC 16GB
takeMS International AG TMS4GB364E081139EM 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Apacer Technology 78.BAGM6.40C0B 4GB
Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905403-156.A00LF 2GB
Apacer Technology 78.BAGN8.AZC0B 4GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMK16GX4M2D2400C14 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston 9965604-016.C01G 8GB
Samsung M391B5673FH0-CH9 2GB
Kingston KHX2400C15S4/8G 8GB
报告一个错误
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Bug description
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