Team Group Inc. TEAMGROUP-UD3-2400 8GB vs Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

总分

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

总分

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

差异规格评论

差异

Team Group Inc. TEAMGROUP-UD3-2400 8GB

需要考虑的原因
Team Group Inc. TEAMGROUP-UD3-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 40

左右 25% 更低的延时
更快的读取速度，GB/s

17.7 13.4

测试中的平均数值

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

需要考虑的原因
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

报告一个错误

更快的写入速度，GB/s

11.3 11.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 40
读取速度，GB/s

17.7 13.4
写入速度，GB/s

11.1 11.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2900 2362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMW64GX4M8C3466C16 8GB

Corsair CMW64GX4M8C3466C16 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3333C16-8GTZKW 8GB

G Skill Intl F4-3333C16-8GTZKW 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Kingston 9905599-029.A00G 4GB

Kingston 9905599-029.A00G 4GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

Corsair CMK32GX4M4B2800C14 8GB

Corsair CMK32GX4M4B2800C14 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

Kingston HP536727-H41-ELD 4GB

Kingston HP536727-H41-ELD 4GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CM4X32GC3200C16K2E 32GB

Corsair CM4X32GC3200C16K2E 32GB

Corsair CMV4GX3M1C1600C11 4GB

Corsair CMV4GX3M1C1600C11 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB