Team Group Inc. ZEUS-2133 8GB vs Corsair CMK128GX4M8X3600C18 16GB

总分

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

总分

Corsair CMK128GX4M8X3600C18 16GB

Corsair CMK128GX4M8X3600C18 16GB

差异规格评论

差异

Team Group Inc. ZEUS-2133 8GB

需要考虑的原因
Team Group Inc. ZEUS-2133 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 59

左右 41% 更低的延时
更快的读取速度，GB/s

15.6 12.5

测试中的平均数值

Corsair CMK128GX4M8X3600C18 16GB

需要考虑的原因
Corsair CMK128GX4M8X3600C18 16GB

报告一个错误

更快的写入速度，GB/s

12.6 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Team Group Inc. ZEUS-2133 8GB

Corsair CMK128GX4M8X3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 59
读取速度，GB/s

15.6 12.5
写入速度，GB/s

9.6 12.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2625 2764

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Corsair CMK128GX4M8X3600C18 16GB

Corsair CMK128GX4M8X3600C18 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

Kllisre M378A1K43BB2-CRC 8GB

Kllisre M378A1K43BB2-CRC 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

EVGA 8GX-D4-2800-MR 8GB

EVGA 8GX-D4-2800-MR 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CM4X8GD3200C16K2E 8GB

Corsair CM4X8GD3200C16K2E 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Kingston HP26D4U9S1ME-4 4GB

Kingston HP26D4U9S1ME-4 4GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Kingston 9905703-008.A00G 16GB

Kingston 9905703-008.A00G 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

Kingston 9965596-031.B00G 8GB

Kingston 9965596-031.B00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Essencore Limited IM48GU48A32-GIISMZ 8GB

Essencore Limited IM48GU48A32-GIISMZ 8GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB