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Transcend Information TS512MSK64W6H 4GB
SK Hynix HMA851U6DJR6N-WM 4GB

Transcend Information TS512MSK64W6H 4GB vs SK Hynix HMA851U6DJR6N-WM 4GB

总分
star star star star star
Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

总分
star star star star star
SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

差异 规格 评论

差异

Transcend Information TS512MSK64W6H 4GB 需要考虑的原因
Transcend Information TS512MSK64W6H 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 3% 更低的延时
SK Hynix HMA851U6DJR6N-WM 4GB 需要考虑的原因
SK Hynix HMA851U6DJR6N-WM 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.3 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 12800
    左右 1.83 更高的带宽

规格

完整的技术规格清单
Transcend Information TS512MSK64W6H 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 30
  • 读取速度，GB/s
    12.1 left arrow 16.3
  • 写入速度，GB/s
    8.0 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 23400
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    1989 left arrow 2761

Transcend Information TS512MSK64W6H 4GB RAM的比较

AMD R538G1601U2S 8GB
Kingston 9905734-003.A00G 32GB

SK Hynix HMA851U6DJR6N-WM 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3000C14-16GVR 16GB
G Skill Intl F4-3000C14-16GVR 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
内存RAM
Transcend Information TS512MSK64W6H 4GB
Transcend Information TS512MSK64W6H 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A1K43BB1-CRC 8GB
Samsung M378A1K43BB1-CRC 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMSX32GX4M1A2666C18 32GB
Corsair CMSX32GX4M1A2666C18 32GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston XG9XKG-MIE 16GB
Kingston XG9XKG-MIE 16GB
内存RAM