TwinMOS 8D7T5MK8-TATP 2GB vs Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

总分

TwinMOS 8D7T5MK8-TATP 2GB

TwinMOS 8D7T5MK8-TATP 2GB

总分

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

差异规格评论

差异

TwinMOS 8D7T5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8D7T5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 13.4

测试中的平均数值

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

报告一个错误

低于PassMark测试中的延时，ns

50 65

左右 -30% 更低的延时
更快的写入速度，GB/s

7.3 2,063.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8D7T5MK8-TATP 2GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 50
读取速度，GB/s

3,580.1 13.4
写入速度，GB/s

2,063.1 7.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

585 1976

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Kingston 9905403-170.A00LF 2GB

Kingston 9905403-170.A00LF 2GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

SK Hynix HMA82GS6JJR8N-VK 16GB

SK Hynix HMA82GS6JJR8N-VK 16GB

G Skill Intl F3-17000CL11-4GBSR 4GB

G Skill Intl F3-17000CL11-4GBSR 4GB

Corsair CMK16GX4M2B3733C17 8GB

Corsair CMK16GX4M2B3733C17 8GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Mushkin 99[2/7/4]199[F/T] 8GB

Mushkin 99[2/7/4]199[F/T] 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905625-096.A00G 16GB

Kingston 9905625-096.A00G 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Avant Technology W641GU42J7240NB 8GB

Avant Technology W641GU42J7240NB 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMW16GX4M2K4266C19 8GB

Corsair CMW16GX4M2K4266C19 8GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Kingston HP26D4U6S8ME-8X 8GB

Kingston HP26D4U6S8ME-8X 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Kingston 9905630-051.A00G 16GB

Kingston 9905630-051.A00G 16GB