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TwinMOS 8DHE3MN8-HATP 2GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
比较
TwinMOS 8DHE3MN8-HATP 2GB vs A-DATA Technology AO2P24HCST2-BTCS 16GB
总分
TwinMOS 8DHE3MN8-HATP 2GB
总分
A-DATA Technology AO2P24HCST2-BTCS 16GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
更快的读取速度,GB/s
3
14.5
测试中的平均数值
更快的写入速度,GB/s
870.4
8.6
测试中的平均数值
需要考虑的原因
A-DATA Technology AO2P24HCST2-BTCS 16GB
报告一个错误
低于PassMark测试中的延时,ns
79
87
左右 -10% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
87
79
读取速度,GB/s
3,155.6
14.5
写入速度,GB/s
870.4
8.6
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
417
1850
TwinMOS 8DHE3MN8-HATP 2GB RAM的比较
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
A-DATA Technology AO2P24HCST2-BTCS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-2133C9-4GAB 4GB
Kingston XCCT36-MIE 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Kingston 9905403-090.A01LF 4GB
Corsair CMW16GX4M2D3000C16 8GB
Kingston 9905471-071.A00LF 8GB
Corsair CMK128GX4M8X3800C19 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-4000C19-16GTZSW 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C18-32GTRG 32GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX3000C16D4/16GX 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Kingston HX316C10F/4 4GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C14-16GVK 16GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
A-DATA Technology DQVE1B16 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3600C17-8GVK 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3333C16-16GTZKW 16GB
报告一个错误
×
Bug description
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