TwinMOS 8DHE3MN8-HATP 2GB vs AMD R744G2133U1S 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

AMD R744G2133U1S 4GB

AMD R744G2133U1S 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 13.8

测试中的平均数值
更快的写入速度，GB/s

870.4 8.8

测试中的平均数值

AMD R744G2133U1S 4GB

需要考虑的原因
AMD R744G2133U1S 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 87

左右 -200% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

AMD R744G2133U1S 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 29
读取速度，GB/s

3,155.6 13.8
写入速度，GB/s

870.4 8.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2415

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3600C16-8GTZNC 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Kingston KHX318C10FR/8G 8GB

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Kingston KHX2400C15D4/4G 4GB

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Qimonda 72T128420EFA3SB2 1GB

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G Skill Intl F4-3600C16-16GVKC 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Corsair CMY8GX3M2A2666C10 4GB

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Corsair CMD64GX4M8A2400C14 8GB

Corsair CMD64GX4M8A2400C14 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Avant Technology W641GU67J5213N8 8GB

Avant Technology W641GU67J5213N8 8GB