TwinMOS 8DHE3MN8-HATP 2GB vs AMD R948G2806U2S 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

AMD R948G2806U2S 8GB

AMD R948G2806U2S 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.7

测试中的平均数值
更快的写入速度，GB/s

870.4 10.2

测试中的平均数值

AMD R948G2806U2S 8GB

需要考虑的原因
AMD R948G2806U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 87

左右 -248% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

AMD R948G2806U2S 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 25
读取速度，GB/s

3,155.6 14.7
写入速度，GB/s

870.4 10.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2802

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston XRGM6C-MIE 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M471B5273CH0-CH9 4GB

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Crucial Technology CT8G4DFS8266.C8FJ 8GB

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Corsair CMK64GX4M4B3600C18 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

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SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Apacer Technology 78.BAGN8.AZC0B 4GB

Apacer Technology 78.BAGN8.AZC0B 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB