TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMK64GX4M8X4200C19 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMK64GX4M8X4200C19 8GB

Corsair CMK64GX4M8X4200C19 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 12.9

测试中的平均数值
更快的写入速度，GB/s

870.4 15.0

测试中的平均数值

Corsair CMK64GX4M8X4200C19 8GB

需要考虑的原因
Corsair CMK64GX4M8X4200C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 87

左右 -211% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK64GX4M8X4200C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 28
读取速度，GB/s

3,155.6 12.9
写入速度，GB/s

870.4 15.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMK16GX4M2E4333C19 8GB

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A-DATA Technology DDR4 2400 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Corsair CMR16GX4M2Z3200C16 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK64GX4M8X4200C19 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston 9905471-001.A01LF 2GB

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PNY Electronics PNY 2GB

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Kingston KVR533D2N4 512MB

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Samsung M393B5270CH0-CH9 4GB

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Samsung M471A2K43BB1-CRC 16GB

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Kingston 9905474-019.A00LF 2GB

Apacer Technology 78.DAGNN.4030B 16GB

Apacer Technology 78.DAGNN.4030B 16GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Corsair CMW8GX4M1Z3600C18 8GB

Corsair CMW8GX4M1Z3600C18 8GB