TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMU32GX4M2A2666C16 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMU32GX4M2A2666C16 16GB

Corsair CMU32GX4M2A2666C16 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.3

测试中的平均数值
更快的写入速度，GB/s

870.4 13.5

测试中的平均数值

Corsair CMU32GX4M2A2666C16 16GB

需要考虑的原因
Corsair CMU32GX4M2A2666C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 87

左右 -200% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMU32GX4M2A2666C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 29
读取速度，GB/s

3,155.6 17.3
写入速度，GB/s

870.4 13.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3397

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX4GX3M1A1600C9 4GB

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AMD AE34G2139U2 4GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N

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Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

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Micron Technology HMA81GU6AFR8N-UH 8GB

Micron Technology HMA81GU6AFR8N-UH 8GB