TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMW64GX4M8C3000C15 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMW64GX4M8C3000C15 8GB

Corsair CMW64GX4M8C3000C15 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.2

测试中的平均数值
更快的写入速度，GB/s

870.4 15.5

测试中的平均数值

Corsair CMW64GX4M8C3000C15 8GB

需要考虑的原因
Corsair CMW64GX4M8C3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 87

左右 -235% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMW64GX4M8C3000C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 26
读取速度，GB/s

3,155.6 15.2
写入速度，GB/s

870.4 15.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3295

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M378T5663QZ3-CF7 2GB

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Kingston 9905471-006.A01LF 4GB

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SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

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Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9905622-025.A01G 4GB

Kingston 9905622-025.A01G 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Kingston 9965684-013.A00G 8GB

Kingston 9965684-013.A00G 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Shenzhen Technology Co Ltd 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

G Skill Intl F4-3200C15-8GTZSK 8GB

G Skill Intl F4-3200C15-8GTZSK 8GB