TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMWX8GD3200C16W4 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMWX8GD3200C16W4 8GB

Corsair CMWX8GD3200C16W4 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.9

测试中的平均数值
更快的写入速度，GB/s

870.4 14.8

测试中的平均数值

Corsair CMWX8GD3200C16W4 8GB

需要考虑的原因
Corsair CMWX8GD3200C16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 87

左右 -211% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMWX8GD3200C16W4 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 28
读取速度，GB/s

3,155.6 17.9
写入速度，GB/s

870.4 14.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3502

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M378B5773DH0-CH9 2GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Ramaxel Technology RMSA3230KB78HAF2133 8GB

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Kingston 9905403-134.A00LF 2GB

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Samsung M4 70T5663CZ3-CE6 2GB

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A-DATA Technology DDR4 3200 2OZ 4GB