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TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB

TwinMOS 8DHE3MN8-HATP 2GB vs Crucial Technology BLS8G4D240FSEK.8FBR 8GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
Crucial Technology BLS8G4D240FSEK.8FBR 8GB

Crucial Technology BLS8G4D240FSEK.8FBR 8GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 5.9
    测试中的平均数值
Crucial Technology BLS8G4D240FSEK.8FBR 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 87
    左右 -248% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 25
  • 读取速度，GB/s
    3,155.6 left arrow 12.9
  • 写入速度，GB/s
    870.4 left arrow 5.9
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    417 left arrow 2051

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Crucial Technology BLS8G4D240FSEK.8FBR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
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Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Ramsta Ramsta-2400Mhz-4G 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Kingston 9905700-046.A00G 16GB
Kingston 9905700-046.A00G 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
G Skill Intl F4-3200C16-16GTZKY 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43DB1-CRC 8GB
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G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Heoriady M471A1K43BB1-CRC 16GB
Heoriady M471A1K43BB1-CRC 16GB
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Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A2666C18 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Kingston 9905678-173.A00G 8GB
Kingston 9905678-173.A00G 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL16G26C16U4W.16FE 16GB
Crucial Technology BL16G26C16U4W.16FE 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Avant Technology J644GU44J2320NQ 32GB
Avant Technology J644GU44J2320NQ 32GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M471A1K1KCB1-CRC 8GB
Samsung M471A1K1KCB1-CRC 8GB
内存RAM
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
内存RAM