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TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB

TwinMOS 8DHE3MN8-HATP 2GB vs Crucial Technology BLS8G4D26BFSTK.8FD 8GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 13.4
    测试中的平均数值
Crucial Technology BLS8G4D26BFSTK.8FD 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 87
    左右 -211% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 28
  • 读取速度，GB/s
    3,155.6 left arrow 17.3
  • 写入速度，GB/s
    870.4 left arrow 13.4
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    417 left arrow 3299

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Corsair CMD128GX4M8B3000C16 16GB
Corsair CMD128GX4M8B3000C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Panram International Corporation W4N2666PS-16G 16GB
Panram International Corporation W4N2666PS-16G 16GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
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Kingston MSI32D4S2S1ME-8 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-2400C17-4GIS 4GB
G Skill Intl F4-2400C17-4GIS 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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G Skill Intl F4-3200C14-8GTZSK 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
内存RAM
Corsair CMZ4GX3M1A1600C9 4GB
Corsair CMZ4GX3M1A1600C9 4GB
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905624-009.A00G 8GB
Kingston 9905624-009.A00G 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CMR16GX4M2K4266C19 8GB
Corsair CMR16GX4M2K4266C19 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA84GR7AFR4N-UH 32GB
SK Hynix HMA84GR7AFR4N-UH 32GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
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Samsung M471A2K43CBCBCRC 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Avant Technology J642GU42J2320NQ 16GB
Avant Technology J642GU42J2320NQ 16GB
内存RAM