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TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
比较
TwinMOS 8DHE3MN8-HATP 2GB vs Crucial Technology CT32G4SFD832A.C16FE 32GB
总分
TwinMOS 8DHE3MN8-HATP 2GB
总分
Crucial Technology CT32G4SFD832A.C16FE 32GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
更快的读取速度,GB/s
3
16.1
测试中的平均数值
更快的写入速度,GB/s
870.4
13.7
测试中的平均数值
需要考虑的原因
Crucial Technology CT32G4SFD832A.C16FE 32GB
报告一个错误
低于PassMark测试中的延时,ns
52
87
左右 -67% 更低的延时
更高的内存带宽,mbps
25600
5300
左右 4.83 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
87
52
读取速度,GB/s
3,155.6
16.1
写入速度,GB/s
870.4
13.7
内存带宽,mbps
5300
25600
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
417
2853
TwinMOS 8DHE3MN8-HATP 2GB RAM的比较
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Crucial Technology CT32G4SFD832A.C16FE 32GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905584-016.A00LF 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
EVGA 16G-D4-2800-MR 4GB
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-3000C16-8GVSB 8GB
Kingston 9965525-140.A00LF 8GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-4400C16-8GVK 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905622-051.A00G 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3400C16-8GTZ 8GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology GD2.1527WT.001 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology AFLD48VH1P 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston XRGM6C-MIB 16GB
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
报告一个错误
×
Bug description
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