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TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3000C14-16GTZ 16GB

TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3000C14-16GTZ 16GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
G Skill Intl F4-3000C14-16GTZ 16GB

G Skill Intl F4-3000C14-16GTZ 16GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 13.6
    测试中的平均数值
G Skill Intl F4-3000C14-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-3000C14-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 87
    左右 -181% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 31
  • 读取速度，GB/s
    3,155.6 left arrow 17.5
  • 写入速度，GB/s
    870.4 left arrow 13.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    417 left arrow 3371

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

G Skill Intl F4-3000C14-16GTZ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston KF2666C13D4/8GX 8GB
Kingston KF2666C13D4/8GX 8GB
内存RAM
A-DATA Technology DQVE1B16 2GB
A-DATA Technology DQVE1B16 2GB
Kingston KHX3200C16D4/16GX 16GB
Kingston KHX3200C16D4/16GX 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
G Skill Intl F4-3000C14-16GTZ 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gloway International (HK) STK4U2133D15081C 8GB
Gloway International (HK) STK4U2133D15081C 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Essencore Limited KD48GU881-26N190D 8GB
Essencore Limited KD48GU881-26N190D 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Jinyu CL16-16-16 D4-2400 8GB
Jinyu CL16-16-16 D4-2400 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Ramsta Ramsta-2400Mhz-4G 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMD32GX4M2B3466C16 16GB
Corsair CMD32GX4M2B3466C16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston MSI24D4D4S8MB-8 8GB
Kingston MSI24D4D4S8MB-8 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston 9905678-023.A00G 8GB
Kingston 9905678-023.A00G 8GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-3600C19-16GVRB 16GB
G Skill Intl F4-3600C19-16GVRB 16GB
内存RAM
Kingston KHX1600C10D3/8GXF 8GB
Kingston KHX1600C10D3/8GXF 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
内存RAM