TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3000C16-8GSXWB 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-3000C16-8GSXWB 8GB

G Skill Intl F4-3000C16-8GSXWB 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18.4

测试中的平均数值
更快的写入速度，GB/s

870.4 14.0

测试中的平均数值

G Skill Intl F4-3000C16-8GSXWB 8GB

需要考虑的原因
G Skill Intl F4-3000C16-8GSXWB 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 87

左右 -211% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3000C16-8GSXWB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 28
读取速度，GB/s

3,155.6 18.4
写入速度，GB/s

870.4 14.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3420

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5713-001.A00G 4GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK32GX4M4B4000C19 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3000C16-8GSXWB 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology CT8G4DFD824A.C16FF 8GB

Crucial Technology CT8G4DFD824A.C16FF 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston XN205T-MIE2 16GB

Kingston XN205T-MIE2 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Kingston 9905678-042.A00G 8GB

Kingston 9905678-042.A00G 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-3200C16-16GVS 16GB

G Skill Intl F4-3200C16-16GVS 16GB