TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3200C15-16GTZKY 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 20.6

测试中的平均数值
更快的写入速度，GB/s

870.4 18.6

测试中的平均数值

G Skill Intl F4-3200C15-16GTZKY 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZKY 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 87

左右 -383% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C15-16GTZKY 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 18
读取速度，GB/s

3,155.6 20.6
写入速度，GB/s

870.4 18.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3607

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-2400C17-8GSXK 8GB

G Skill Intl F4-2400C17-8GSXK 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Crucial Technology CT25664BA1339.M8FK 2GB

Crucial Technology CT25664BA1339.M8FK 2GB

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Corsair CMW16GX4M2K3600C16 8GB

Corsair CMW16GX4M2K3600C16 8GB

G Skill Intl F4-3200C22-32GRS 32GB

G Skill Intl F4-3200C22-32GRS 32GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Apacer Technology 78.DAGRL.4050C 16GB

Apacer Technology 78.DAGRL.4050C 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-3600C14-16GTZN 16GB

G Skill Intl F4-3600C14-16GTZN 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N