TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-4000C17-8GTZRB 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 21

测试中的平均数值
更快的写入速度，GB/s

870.4 19.4

测试中的平均数值

G Skill Intl F4-4000C17-8GTZRB 8GB

需要考虑的原因
G Skill Intl F4-4000C17-8GTZRB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 87

左右 -248% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-4000C17-8GTZRB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 25
读取速度，GB/s

3,155.6 21.0
写入速度，GB/s

870.4 19.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 4129

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

KingSpec KingSpec 16GB

KingSpec KingSpec 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3200C16-8GVGB 8GB

G Skill Intl F4-3200C16-8GVGB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston HX424C15FB/16 16GB

Kingston HX424C15FB/16 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMD16GX4M2B3600C18 8GB

Corsair CMD16GX4M2B3600C18 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Essencore Limited KD4AGSA8A-32N2200 16GB

Essencore Limited KD4AGSA8A-32N2200 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Transcend Information TS512MSH64V1H 4GB

Transcend Information TS512MSH64V1H 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB