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TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4400C18-8GTRG 8GB

TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-4400C18-8GTRG 8GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
G Skill Intl F4-4400C18-8GTRG 8GB

G Skill Intl F4-4400C18-8GTRG 8GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 17.1
    测试中的平均数值
G Skill Intl F4-4400C18-8GTRG 8GB 需要考虑的原因
G Skill Intl F4-4400C18-8GTRG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 87
    左右 -263% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4400C18-8GTRG 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 24
  • 读取速度，GB/s
    3,155.6 left arrow 19.0
  • 写入速度，GB/s
    870.4 left arrow 17.1
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    417 left arrow 4069

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

G Skill Intl F4-4400C18-8GTRG 8GB RAM的比较

Samsung M395T2863QZ4-CF76 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
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G Skill Intl F4-2400C15-8GFXR 8GB
内存RAM
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内存RAM
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内存RAM
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