TwinMOS 8DHE3MN8-HATP 2GB vs Heoriady M471A1K43BB1-CRC 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.1

测试中的平均数值
更快的写入速度，GB/s

870.4 9.6

测试中的平均数值

Heoriady M471A1K43BB1-CRC 16GB

需要考虑的原因
Heoriady M471A1K43BB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 87

左右 -135% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Heoriady M471A1K43BB1-CRC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 37
读取速度，GB/s

3,155.6 15.1
写入速度，GB/s

870.4 9.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 2758

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology D12.2755BS.001 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Micron Technology 8KTF25664HZ-1G4M1 2GB

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Samsung M471B5673FH0-CF8 2GB

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SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMK64GX4M8Z2933C16 8GB

Corsair CMK64GX4M8Z2933C16 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Mushkin MR[ABC]4U320GJJM32G 32GB

Mushkin MR[ABC]4U320GJJM32G 32GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-2133C15-8GRR2 8GB

G Skill Intl F4-2133C15-8GRR2 8GB

Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB