TwinMOS 8DHE3MN8-HATP 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.3

测试中的平均数值
更快的写入速度，GB/s

870.4 12.7

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 87

左右 -248% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 25
读取速度，GB/s

3,155.6 15.3
写入速度，GB/s

870.4 12.7
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 2704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

SK Hynix HMT325U6BFR8C-H9 2GB

SK Hynix HMT325U6BFR8C-H9 2GB

Kingston 9905624-004.A00G 4GB

Kingston 9905624-004.A00G 4GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Samsung M378A1G44BB0-CWE 8GB

Samsung M378A1G44BB0-CWE 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Corsair CMW128GX4M4E3200C16 32GB

Corsair CMW128GX4M4E3200C16 32GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology CT4G4DFS8213.M8FA 4GB

Crucial Technology CT4G4DFS8213.M8FA 4GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston 9905599-010.A00G 4GB

Kingston 9905599-010.A00G 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-3600C16-16GTRSC 16GB

G Skill Intl F4-3600C16-16GTRSC 16GB