TwinMOS 8DHE3MN8-HATP 2GB vs Kingston 9905624-010.A00G 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston 9905624-010.A00G 4GB

Kingston 9905624-010.A00G 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.5

测试中的平均数值
更快的写入速度，GB/s

870.4 10.4

测试中的平均数值

Kingston 9905624-010.A00G 4GB

需要考虑的原因
Kingston 9905624-010.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 87

左右 -222% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston 9905624-010.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 27
读取速度，GB/s

3,155.6 14.5
写入速度，GB/s

870.4 10.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2195

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Kingston 9905665-020.A00G 4GB

Kingston 9905665-020.A00G 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston 9905624-010.A00G 4GB

Kingston 9905624-010.A00G 4GB

Samsung DDR3 8GB 1600MHz 8GB

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Crucial Technology CT8G4DFD824A.C16FADP 8GB

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Samsung M471B5773DH0-CH9 2GB

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Crucial Technology CT16G4SFD832A.C16FJ 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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A-DATA Technology AM1P24HC8T1-BBJS 8GB

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Samsung M471B5173BH0-CK0 4GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3200C14-8GTZR 8GB

G Skill Intl F4-3200C14-8GTZR 8GB