TwinMOS 8DHE3MN8-HATP 2GB vs Kingston 9965589-005.A01G 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston 9965589-005.A01G 8GB

Kingston 9965589-005.A01G 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 11.2

测试中的平均数值
更快的写入速度，GB/s

870.4 7.7

测试中的平均数值

Kingston 9965589-005.A01G 8GB

需要考虑的原因
Kingston 9965589-005.A01G 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 87

左右 -98% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston 9965589-005.A01G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 44
读取速度，GB/s

3,155.6 11.2
写入速度，GB/s

870.4 7.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2146

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston 9965589-005.A01G 8GB

Kingston 9965589-005.A01G 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Essencore Limited KD4AGU880-36A180U 16GB

Essencore Limited KD4AGU880-36A180U 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905734-082.A00G 16GB

Kingston 9905734-082.A00G 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Corsair CMD64GX4M4B3000C15 16GB

Corsair CMD64GX4M4B3000C15 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology CT8G4SFS824A.M8FB 8GB

Crucial Technology CT8G4SFS824A.M8FB 8GB

SK Hynix HMP125U6EFR8C-S6 2GB

SK Hynix HMP125U6EFR8C-S6 2GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Kingston 9905622-058.A00G 8GB

Kingston 9905622-058.A00G 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

G Skill Intl F4-2666C18-32GVK 32GB

G Skill Intl F4-2666C18-32GVK 32GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-4266C19-8GTZR 8GB

G Skill Intl F4-4266C19-8GTZR 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston 9905713-008.A00G 4GB

Kingston 9905713-008.A00G 4GB