TwinMOS 8DHE3MN8-HATP 2GB vs Kingston ACR26D4S9S1ME-4 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston ACR26D4S9S1ME-4 4GB

Kingston ACR26D4S9S1ME-4 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 13.9

测试中的平均数值
更快的写入速度，GB/s

870.4 11.0

测试中的平均数值

Kingston ACR26D4S9S1ME-4 4GB

需要考虑的原因
Kingston ACR26D4S9S1ME-4 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 87

左右 -107% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston ACR26D4S9S1ME-4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 42
读取速度，GB/s

3,155.6 13.9
写入速度，GB/s

870.4 11.0
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 2034

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.01G86.9H50C 1GB

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Smart Modular SF4642G8CK8IEHLSBG 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Apacer Technology D22.2221ZA.001 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston ACR26D4S9S1ME-4 4GB

Kingston ACR26D4S9S1ME-4 4GB

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Kingston KVR16N11/8-SP 8GB

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Kingston 99U5643-001.A00G 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston HX432C15PB3/16 16GB

Kingston HX432C15PB3/16 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

G Skill Intl F4-4000C15-8GVK 8GB

G Skill Intl F4-4000C15-8GVK 8GB

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Corsair CMD32GX4M4C3000C15 8GB

Corsair CMD32GX4M4C3000C15 8GB