TwinMOS 8DHE3MN8-HATP 2GB vs Kingston KCRXJ6-HYJ 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston KCRXJ6-HYJ 16GB

Kingston KCRXJ6-HYJ 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.7

测试中的平均数值
更快的写入速度，GB/s

870.4 11.0

测试中的平均数值

Kingston KCRXJ6-HYJ 16GB

需要考虑的原因
Kingston KCRXJ6-HYJ 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 87

左右 -129% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston KCRXJ6-HYJ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 38
读取速度，GB/s

3,155.6 14.7
写入速度，GB/s

870.4 11.0
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 2606

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4SFD824A.C16FADP 8GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

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Kingston 99U5474-038.A00LF 4GB

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SK Hynix HMA451R7MFR8N-TF 4GB

SK Hynix HMA451R7MFR8N-TF 4GB