TwinMOS 8DHE3MN8-HATP 2GB vs Micron Technology 16ATF1G64AZ-2G1A2 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.4

测试中的平均数值
更快的写入速度，GB/s

870.4 11.5

测试中的平均数值

Micron Technology 16ATF1G64AZ-2G1A2 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A2 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 87

左右 -142% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 36
读取速度，GB/s

3,155.6 15.4
写入速度，GB/s

870.4 11.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

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Corsair CML8GX3M2A1600C9 4GB

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Apacer Technology 78.CAGPN.DF40B 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Micron Technology 16ATF1G64AZ-2G1A2 8GB

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Kingston 9905403-061.A00LF 2GB

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Crucial Technology CT16G4DFD8266.M16FR 16GB

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Ramsta Ramsta-2400Mhz-4G 4GB

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AMD R5S38G1601U2S 8GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-4266C19-8GTRS 8GB

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Team Group Inc. TEAMGROUP-UD4-3866 8GB

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Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

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Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

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G Skill Intl F4-3300C16-8GTZ 8GB

Kingston 9905403-447.A00LF 4GB

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Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB