TwinMOS 8DHE3MN8-HATP 2GB vs Micron Technology 16ATF2G64HZ-2G6J1 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.2

测试中的平均数值
更快的写入速度，GB/s

870.4 11.4

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G6J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6J1 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 87

左右 -129% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 38
读取速度，GB/s

3,155.6 15.2
写入速度，GB/s

870.4 11.4
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 2821

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston ACR512X64D3S13C9G 4GB

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Kingston 9965600-012.A01G 16GB

Kingston 9965600-012.A01G 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Corsair CM4X4GF3000C15K4 4GB

Corsair CM4X4GF3000C15K4 4GB

Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-4400C16-8GTRS 8GB

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Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

G Skill Intl F4-2400C15-16GTZRX 16GB

G Skill Intl F4-2400C15-16GTZRX 16GB