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TwinMOS 8DHE3MN8-HATP 2GB
Mushkin 99[2/7/4]200F 8GB
比较
TwinMOS 8DHE3MN8-HATP 2GB vs Mushkin 99[2/7/4]200F 8GB
总分
TwinMOS 8DHE3MN8-HATP 2GB
总分
Mushkin 99[2/7/4]200F 8GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
更快的读取速度,GB/s
3
13.7
测试中的平均数值
更快的写入速度,GB/s
870.4
10.3
测试中的平均数值
需要考虑的原因
Mushkin 99[2/7/4]200F 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
87
左右 -235% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Mushkin 99[2/7/4]200F 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
87
26
读取速度,GB/s
3,155.6
13.7
写入速度,GB/s
870.4
10.3
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
417
2740
TwinMOS 8DHE3MN8-HATP 2GB RAM的比较
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Mushkin 99[2/7/4]200F 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273DH0-CH9 4GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO2P32NCSV1-BEVS 16GB
Kingston 99U5474-023.A00LF 4GB
Kingston XCCT36-MIE 16GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-8GIS 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMWX8GD3600C18W4 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
PNY Electronics PNY 2GB
Kingston 99U5701-049.A00G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C17-8GTRG 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Corsair CML8GX3M2A1866C9 4GB
Samsung M391A1K43BB2-CTD 8GB
报告一个错误
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Bug description
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