TwinMOS 8DHE3MN8-HATP 2GB vs Samsung M378A2K43DB1-CTD 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.3

测试中的平均数值
更快的写入速度，GB/s

870.4 11.9

测试中的平均数值

Samsung M378A2K43DB1-CTD 16GB

需要考虑的原因
Samsung M378A2K43DB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 87

左右 -142% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M378A2K43DB1-CTD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 36
读取速度，GB/s

3,155.6 15.3
写入速度，GB/s

870.4 11.9
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 2981

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16U4W.8FE 8GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

EXCELERAM EKBLACK4163016AD 8GB

EXCELERAM EKBLACK4163016AD 8GB