TwinMOS 8DHE3MN8-HATP 2GB vs Samsung M471A1G44BB0-CWE 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.3

测试中的平均数值
更快的写入速度，GB/s

870.4 11.0

测试中的平均数值

Samsung M471A1G44BB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44BB0-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

60 87

左右 -45% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M471A1G44BB0-CWE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 60
读取速度，GB/s

3,155.6 15.3
写入速度，GB/s

870.4 11.0
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

417 2359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Corsair CMK32GX4M1A2666C16 32GB

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SK Hynix HMA84GR7MFR4N-TF 32GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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AMD AE34G1601U1 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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Samsung M386B4G70DM0-CMA4 32GB

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Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

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Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB