TwinMOS 8DHE3MN8-HATP 2GB vs Samsung M471A2G43AB2-CWE 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值
更快的写入速度，GB/s

870.4 12.8

测试中的平均数值

Samsung M471A2G43AB2-CWE 16GB

需要考虑的原因
Samsung M471A2G43AB2-CWE 16GB

报告一个错误

低于PassMark测试中的延时，ns

46 87

左右 -89% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M471A2G43AB2-CWE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 46
读取速度，GB/s

3,155.6 15.9
写入速度，GB/s

870.4 12.8
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

417 2936

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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SK Hynix HMT351U6CFR8C-H9 4GB

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AMD R748G2400S2S 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Crucial Technology CT8G4DFS8213.M8FH 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M471A2G43AB2-CWE 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMK8GX4M2A2400C16 4GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Corsair CMK16GX4M2B3466C16 8GB

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Samsung M393B1K70CH0-YH9 8GB

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Crucial Technology BLS8G4D240FSB.M16FBD 8GB

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Samsung M393B5170FH0-CH9 4GB

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Patriot Memory (PDP Systems) PSD48G21332 8GB

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Kingston 9905471-006.A00LF 4GB

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G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMK8GX4M2B3866C18 4GB

Corsair CMK8GX4M2B3866C18 4GB

Samsung M471B5173QH0-YK0 4GB

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EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

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Micron Technology 8ATF1G64AZ-2G6D1 8GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB