TwinMOS 8DHE3MN8-HATP 2GB vs SK Hynix GKE800SO102408-2400 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14

测试中的平均数值
更快的写入速度，GB/s

870.4 9.3

测试中的平均数值

SK Hynix GKE800SO102408-2400 8GB

需要考虑的原因
SK Hynix GKE800SO102408-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 87

左右 -135% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

SK Hynix GKE800SO102408-2400 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 37
读取速度，GB/s

3,155.6 14.0
写入速度，GB/s

870.4 9.3
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 2327

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

AMD R7S48G2400U2S 8GB

AMD R7S48G2400U2S 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMW32GX4M2D3600C18 16GB

Corsair CMW32GX4M2D3600C18 16GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Kingston 9905625-011.A00G 8GB

Kingston 9905625-011.A00G 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Transcend Information AQD-SD4U16GN21-SE 16GB

Transcend Information AQD-SD4U16GN21-SE 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Golden Empire CL15-15-15 D4-2400 4GB

Golden Empire CL15-15-15 D4-2400 4GB