TwinMOS 8DHE3MN8-HATP 2GB vs SK Hynix HMA84GL7AMR4N-TF 32GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

SK Hynix HMA84GL7AMR4N-TF 32GB

SK Hynix HMA84GL7AMR4N-TF 32GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的写入速度，GB/s

870.4 7.7

测试中的平均数值

SK Hynix HMA84GL7AMR4N-TF 32GB

需要考虑的原因
SK Hynix HMA84GL7AMR4N-TF 32GB

报告一个错误

低于PassMark测试中的延时，ns

38 87

左右 -129% 更低的延时
更快的读取速度，GB/s

8.6 3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

SK Hynix HMA84GL7AMR4N-TF 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 38
读取速度，GB/s

3,155.6 8.6
写入速度，GB/s

870.4 7.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2094

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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G Skill Intl F4-3200C16-16GTZKW 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Apacer Technology 78.CAGNK.4040B 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Samsung M378B5673FH0-CH9 2GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB