TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology BLS4G4D240FSC.8FBR2 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18.5

测试中的平均数值

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSC.8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 53

左右 -141% 更低的延时
更快的写入速度，GB/s

11.4 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 22
读取速度，GB/s

3,726.4 18.5
写入速度，GB/s

1,590.1 11.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 3116

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

NSITEXE Inc Visenta 16GB

NSITEXE Inc Visenta 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

SK Hynix HMA82GU6DJR8N-WM 16GB

SK Hynix HMA82GU6DJR8N-WM 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C17-16GTZKW 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

G Skill Intl F4-3600C18-16GTZR 16GB

G Skill Intl F4-3600C18-16GTZR 16GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Avant Technology J641GU42J5213N0 8GB

Avant Technology J641GU42J5213N0 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-4000C17-16GTZRB 16GB

G Skill Intl F4-4000C17-16GTZRB 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Avant Technology J641GU42J9266ND 8GB

Avant Technology J641GU42J9266ND 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA41GR7AFR4N-UH 8GB

SK Hynix HMA41GR7AFR4N-UH 8GB