TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-2800C16-4GRK 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

G Skill Intl F4-2800C16-4GRK 4GB

G Skill Intl F4-2800C16-4GRK 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.4

测试中的平均数值

G Skill Intl F4-2800C16-4GRK 4GB

需要考虑的原因
G Skill Intl F4-2800C16-4GRK 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 53

左右 -39% 更低的延时
更快的写入速度，GB/s

11.5 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-2800C16-4GRK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 38
读取速度，GB/s

3,726.4 14.4
写入速度，GB/s

1,590.1 11.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 2856

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD32GX4M2C3200C16 16GB

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Micron Technology 8ATF1G64AZ-3G2J1 8GB

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Samsung M395T2863QZ4-CF76 1GB

Maxsun MSD48G26Q3 8GB

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AMD AE34G1601U1 4GB

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Super Talent F21UB8GS 8GB

Super Talent F21UB8GS 8GB

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A-DATA Technology DOVF1B163G2G 2GB

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G Skill Intl F4-3000C15-8GVKB 8GB

Samsung M3 93T5750CZA-CE6 2GB

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Kingmax Semiconductor GLLG42F-18---------- 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Panram International Corporation D4N2666PS-16G 16GB