Samsung M3 93T5750CZA-CE6 2GB vs Kingmax Semiconductor GLLG42F-18---------- 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.6

测试中的平均数值

Kingmax Semiconductor GLLG42F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GLLG42F-18---------- 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 77

左右 -235% 更低的延时
更快的写入速度，GB/s

7.2 2,622.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 23
读取速度，GB/s

3,405.2 14.6
写入速度，GB/s

2,622.0 7.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4S24AM.M16FB 16GB

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Corsair CMK32GX4M4B4000C19 8GB

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Kingston 99U5469-045.A00LF 4GB

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Corsair CMK64GX4M4C3000C16 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-3200C15-8GTZKW 8GB

G Skill Intl F4-3200C15-8GTZKW 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Golden Empire CL15-17-17 D4-2666 8GB

Golden Empire CL15-17-17 D4-2666 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology BL16G32C16S4B.16FE 16GB

Crucial Technology BL16G32C16S4B.16FE 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB