TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-3200C16-8GTZKY 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.3

测试中的平均数值

G Skill Intl F4-3200C16-8GTZKY 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZKY 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 53

左右 -66% 更低的延时
更快的写入速度，GB/s

12.7 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3200C16-8GTZKY 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 32
读取速度，GB/s

3,726.4 16.3
写入速度，GB/s

1,590.1 12.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 2999

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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Crucial Technology CT16G4SFRA32A.C16FP 16GB

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Corsair CML16GX3M2A1600C10 8GB

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G Skill Intl F4-3600C19-8GSXF 8GB

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Kingston 99U5428-063.A00LF 8GB

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Corsair CMG32GX4M2E3200C16 16GB

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Samsung M471A5244CB0-CTD 4GB

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Patriot Memory (PDP Systems) PSD48G213382 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

G Skill Intl F4-3600C16-16GTRG 16GB

G Skill Intl F4-3600C16-16GTRG 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Kingston 9965596-031.B00G 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Kingston 9905712-035.A00G 16GB

Kingston 9905712-035.A00G 16GB