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TwinMOS 9DECCO4E-TATP 8GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB

TwinMOS 9DECCO4E-TATP 8GB vs Ramaxel Technology RMSA3270MB76H8F2400 2GB

总分
star star star star star
TwinMOS 9DECCO4E-TATP 8GB

TwinMOS 9DECCO4E-TATP 8GB

总分
star star star star star
Ramaxel Technology RMSA3270MB76H8F2400 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

差异 规格 评论

差异

TwinMOS 9DECCO4E-TATP 8GB 需要考虑的原因
TwinMOS 9DECCO4E-TATP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 96
    左右 74% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 5.9
    测试中的平均数值
Ramaxel Technology RMSA3270MB76H8F2400 2GB 需要考虑的原因
Ramaxel Technology RMSA3270MB76H8F2400 2GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
TwinMOS 9DECCO4E-TATP 8GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 96
  • 读取速度，GB/s
    15.0 left arrow 10.5
  • 写入速度，GB/s
    9.8 left arrow 5.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2698 left arrow 1211

TwinMOS 9DECCO4E-TATP 8GB RAM的比较

Crucial Technology CT8G48C40U5.M4A1 8GB
Kingston 9905744-077.A00G 16GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Panram International Corporation W4U2666P-8G 8GB
Panram International Corporation W4U2666P-8G 8GB
内存RAM
TwinMOS 9DECCO4E-TATP 8GB
TwinMOS 9DECCO4E-TATP 8GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Essencore Limited KD48GU880-26N160T 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C16-32GVK 32GB
G Skill Intl F4-3600C16-32GVK 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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内存RAM
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Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston HP26D4S9S8MD-8 8GB
Kingston HP26D4S9S8MD-8 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMW32GX4M2D3000C16 16GB
Corsair CMW32GX4M2D3000C16 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin MRB4U300GJJM16G 16GB
Mushkin MRB4U300GJJM16G 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Samsung M378A5244CB0-CVF 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Panram International Corporation W4N2666PS-16G 16GB
Panram International Corporation W4N2666PS-16G 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT16G4S24AM.M16FE 16GB
Crucial Technology CT16G4S24AM.M16FE 16GB
内存RAM