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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Crucial Technology BL16G30C15U4W.M16FE1 16GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
Crucial Technology BL16G30C15U4W.M16FE1 16GB

Crucial Technology BL16G30C15U4W.M16FE1 16GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.3
    测试中的平均数值
Crucial Technology BL16G30C15U4W.M16FE1 16GB 需要考虑的原因
Crucial Technology BL16G30C15U4W.M16FE1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 96
    左右 -231% 更低的延时
  • 更快的写入速度，GB/s
    15.2 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 29
  • 读取速度，GB/s
    2,725.2 left arrow 18.3
  • 写入速度，GB/s
    1,336.0 left arrow 15.2
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    438 left arrow 3721

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

Crucial Technology BL16G30C15U4W.M16FE1 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
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Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Samsung M474A1G43EB1-CRC 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965643-002.A01G 4GB
Kingston 9965643-002.A01G 4GB
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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
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Corsair CMH128GX4M4E3200C16 32GB
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SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
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Crucial Technology BLS8G4D240FSEK.8FD 8GB
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G Skill Intl F3-2666C12-8GTXD 8GB
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G Skill Intl F4-3333C16-16GTZSK 16GB
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Kingston KVR16N11/8-SP 8GB
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SK Hynix HMA81GS6AFR8N-VK 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Crucial Technology BLT4G4D30AETA.K8FE 4GB
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Team Group Inc. Vulcan-1600 4GB
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内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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G Skill Intl F4-2666C18-8GTZR 8GB
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TwinMOS 8DHE3MN8-HATP 2GB
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Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
内存RAM
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G Skill Intl F2-8500CL5-2GBPI 2GB
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Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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Essencore Limited 8GBF1X08QFHH38-135-K 8GB
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Kingston XF875V-MIH 8GB
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