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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Crucial Technology BLT4G4D26AFTA.8FBD 4GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
更快的读取速度,GB/s
2
16.5
测试中的平均数值
需要考虑的原因
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
96
左右 -317% 更低的延时
更快的写入速度,GB/s
12.9
1,336.0
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
23
读取速度,GB/s
2,725.2
16.5
写入速度,GB/s
1,336.0
12.9
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
438
2709
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CM4X16GD3200C16K2E 16GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Kingston K1N7HK-ELC 2GB
Corsair CMK64GX4M4X4000C18 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A2K43BB1-CRC 16GB
Kingston 9905403-061.A00LF 2GB
Apacer Technology 76.D105G.D090B 16GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3600C14-16GVKA 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-3466C16-8GVR 8GB
Samsung M393B1K70CH0-YH9 8GB
Corsair CMD8GX4M2B3000C15 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT64GX4M4K3600C18 16GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2133C14S4/16G 16GB
Samsung M393B1K70CH0-YH9 8GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
报告一个错误
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Bug description
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